Sub-50nm nanoparticle removal from EUV masks via elastomer stamp

<!-- START_ABSTRACT --> <p> Defect control on extreme ultraviolet (EUV) masks is essential for ensuring high yield in sub-5 nm semiconductor manufacturing. In this study, we introduce a novel particle removal method using elastomer stamp such as polydimethylsiloxane (PDMS). Oxygen plasma generates hydroxyl groups on the PDMS surface, enabling strong adhesion to nanoparticles, as confirmed by molecular dynamics simulations. To minimize pattern damage, we implement a laserinduced localized stamping technique that restricts contact to areas with particles through controlled thermal expansion. Experimental results demonstrate effective removal of 50 nm particles without damaging the mask. This method provides a selective, non-destructive alternative for advanced EUV mask cleaning and defect management. </p> <!-- END_ABSTRACT --> <!-- START_TEMPLATE --> <ul> <li> Source: </li> <li> Tags: </li> </ul> <!-- END_TEMPLATE -->